| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Radiation Effects Due to 3MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors |
| Xiang Zhang1,2,3, Yu-Dong Li1,2, Lin Wen1,2, Dong Zhou1,2, Jie Feng1,2, Lin-Dong Ma1,2,3, Tian-Hui Wang1,2,3, Yu-Long Cai1,2,3, Zhi-Ming Wang1,2,3, Qi Guo1,2** |
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Xiang Zhang, Yu-Dong Li, Lin Wen et al 2018 Chin. Phys. Lett. 35 074201 |
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Abstract Benefitting from the higher quantum efficiency and sensitivity compared with the front-side illumination (FSI) CMOS image sensors (CISs), backside illumination (BSI) CMOS image sensors tend to replace CCDs and FSI CISs for space applications. However, the radiation damage effects and mechanisms of BSI CISs in the radiation environment are not well understood. We provide radiation effects due to 3 MeV proton irradiations of BSI CISs dedicated to imaging by the analyses of mean dark current increase, dark current nonuniformity and full well capacity in pixel arrays and isolated photodiodes. Additionally, the present annealing certifies the radiation-induced defects, which are responsible for the parameter degradations in BSI CISs.
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Received: 28 December 2017
Published: 24 June 2018
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| PACS: |
42.88.+h
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(Environmental and radiation effects on optical elements, devices, and systems)
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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05.40.-a
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(Fluctuation phenomena, random processes, noise, and Brownian motion)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 11675259, the National Defense Pre-research Foundation of China under Grant No 6140A2404051, and the West Light Foundation of Chinese Academy of Sciences under Grant Nos 2016-QNXZ-B-8 and 2016-QNXZ-B-2. |
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