| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure |
| Xin Wang1,2,3, Wu Lu1,2**, Wu-Ying Ma1,2, Qi Guo1,2, Zhi-Kuan Wang4, Cheng-Fa He1,2, Mo-Han Liu1,2,3, Xiao-Long Li1,2,3, Jin-Cheng Jia1,2,3 |
1Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
4State Key Laboratory of Analog Integrated Circuit, Chongqing 400060
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| Cite this article: |
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Xin Wang, Wu Lu, Wu-Ying Ma et al 2016 Chin. Phys. Lett. 33 086101 |
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Abstract The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge ($N_{\rm ot}$) and interface trap ($N_{\rm it}$) densities. All the samples are exposed in the Co-60$\gamma $ ray with the dose rate of 0.5 Gy(Si)/s. After the irradiation, the buildup of $N_{\rm ot}$ and $N_{\rm it}$ of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.
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Received: 31 March 2016
Published: 31 August 2016
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| PACS: |
61.80.Ed
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(γ-ray effects)
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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85.30.Tv
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(Field effect devices)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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61.82.Fk
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(Semiconductors)
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