| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Oxygen Scavenging Effect of LaLuO$_{3}$/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors |
| Jin-Feng Feng1, Chang Liu2, Wen-Jie Yu2**, Ying-Hong Peng1 |
1School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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Jin-Feng Feng, Chang Liu, Wen-Jie Yu et al 2016 Chin. Phys. Lett. 33 057701 |
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Abstract Higher-$\kappa$ dielectric LaLuO$_{3}$, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconductor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO$_{3}$ with Ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
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Received: 11 January 2016
Published: 31 May 2016
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| PACS: |
77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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61.72.uf
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(Ge and Si)
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72.20.Dp
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(General theory, scattering mechanisms)
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85.30.-z
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(Semiconductor devices)
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