Chin. Phys. Lett.  2016, Vol. 33 Issue (04): 044204    DOI: 10.1088/0256-307X/33/4/044204
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Simulation of Far-Field Properties of Coherent Vertical Cavity Surface Emitting Laser Array
Meng Xun1, Chen Xu1**, Yi-Yang Xie1,2, Jun Deng1, Guo-Qing Jiang1, Guan-Zhong Pan1, Yi-Bo Dong, Hong-Da Chen2
1Key Laboratory of Optoelectronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124
2State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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Meng Xun, Chen Xu, Yi-Yang Xie et al  2016 Chin. Phys. Lett. 33 044204
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Abstract Far-field properties dependent on array scale, separation, element width and emitted wavelength are systematically analyzed theoretically and experimentally. An array model based on the finite-difference method is established to simulate the far-field profile of the coherent arrays. Some important conclusions are obtained. To achieve a higher quality beam, it is necessary to decrease separation between elements, or to increase the element width. Higher brightness can be achieved in the array with larger scale. Emitted wavelength also has an influence on the far-field profile. These analyses can be extended to the future design of coherent vertical cavity surface emitting laser arrays.
Received: 31 January 2016      Published: 29 April 2016
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)  
  42.55.Tv (Photonic crystal lasers and coherent effects)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/33/4/044204       OR      https://cpl.iphy.ac.cn/Y2016/V33/I04/044204
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Meng Xun
Chen Xu
Yi-Yang Xie
Jun Deng
Guo-Qing Jiang
Guan-Zhong Pan
Yi-Bo Dong
Hong-Da Chen
[1]Du W M, Cao W Y and He Y F 2013 Chin. Phys. B 22 076803
[2]Cui H Y, Huang M and Ma M L 2013 Chin. Phys. B 22 124203
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[8]Lehman A C and Choquette K D 2007 IEEE Photon. Technol. Lett. 19 1421
[9]Xun M, Xu C, Xie Y Y, Zhu Y X, Mao M M, Xu K, Wang J, Liu J and Chen H D 2014 Electron. Lett. 50 1085
[10]Xun M, Xu C, Deng J, Xie Y Y, Jiang G Q, Wang J, Xu K and Chen H D 2015 Opt. Lett. 40 2349
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[13]Xun M, Xu C, Xie Y Y, Deng J, Xu K and Chen H D 2015 IEEE J. Quantum Electron. 51 2600106
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