| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions |
| WANG Hong-Chao1, HE Yi-Ting2, SUN Hua-Yang2, QIU Zhi-Ren2**, XIE Deng1, MEI Ting3**, Tin C. C.4, FENG Zhe-Chuan5 |
1Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631
2State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun YatSen University, Guangzhou 510275
3The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an 710072
4Department of Mechanical Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia
5College of Physics Science and Technology, and GXU-NAOC Center for Astrophysics and Space Science, Guangxi University, Nanning 530004
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| Cite this article: |
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WANG Hong-Chao, HE Yi-Ting, SUN Hua-Yang et al 2015 Chin. Phys. Lett. 32 047801 |
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Abstract The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550 K. The effects of growth conditions on E2(TO), E1(TO) and A1(LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2(TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2(TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1(LOPC) mode in 4H-SiC.
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Received: 17 October 2014
Published: 30 April 2015
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| PACS: |
78.30.Hv
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(Other nonmetallic inorganics)
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72.80.Jc
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(Other crystalline inorganic semiconductors)
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32.30.Rj
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(X-ray spectra)
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