| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance |
| WANG Ji-Min1,2, ZHANG Xiao-Zhong1,2**, PIAO Hong-Guang1,2, LUO Zhao-Chu1,2, XIONG Cheng-Yue1,2 |
1Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084
2National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084
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| Cite this article: |
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WANG Ji-Min, ZHANG Xiao-Zhong, PIAO Hong-Guang et al 2014 Chin. Phys. Lett. 31 077201 |
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Abstract We develop a non-volatile resistive switching device in a Si–SiO2–Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 103% at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.
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Published: 30 June 2014
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| PACS: |
72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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75.47.Pq
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(Other materials)
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