| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates |
| LI Zhi-Dong1,2, XIAO Hong-Ling1,2**, WANG Xiao-Liang1,2,3,4, WANG Cui-Mei1,2, DENG Qing-Wen1,2 JING Liang1,2, DING Jie-Qin1,2, WANG Zhan-Guo1,2, HOU Xun4 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083
3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083
4Xi'an Jiaotong University, Xi'an 710049
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| Cite this article: |
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LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang et al 2013 Chin. Phys. Lett. 30 068402 |
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Abstract Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage Voc=0.32 V, and short circuit current Jsc=0.07 mA/cm2, under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AlN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.
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Received: 27 March 2013
Published: 31 May 2013
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| PACS: |
84.60.Jt
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(Photoelectric conversion)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.67.De
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(Quantum wells)
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