| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Fabrication of P-Type ZnO:N Film by Radio-Frequency Magnetron Sputtering for Extremely Thin Absorber Solar Cell Applications |
| WANG Xiang-Hu1**, LI Rong-Bin1, FAN Dong-Hua2 |
1School of Mechanical Engineering, Shanghai Dianji University, Shanghai 200240
2School of Applied Physics and Materials, Wuyi University, Jiangmen 529020
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| Cite this article: |
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WANG Xiang-Hu, LI Rong-Bin, FAN Dong-Hua 2013 Chin. Phys. Lett. 30 037202 |
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Abstract We successfully fabricate p-type ZnO:N films by using rf magnetron sputtering and in situ annealing in O2 atmosphere. These p-type ZnO:N films can be used as p-type window materials for extremely thin absorber (ETA) solar cells composed of quartz glass/p-ZnO:N/i-ZnO/CdSe/i-ZnO/n-ZnO:Al. The short-circuit photocurrent density, open circuit voltage, fill factor and conversion efficiency of the ETA solar cells can be determined to be 8.549 mA/cm2, 0.702 V, 0.437 and 2.623%, respectively, through measurements of photovoltaic properties under illumination with a 100 mW/cm2 at air-mass (AM) 1.5.
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Received: 12 December 2012
Published: 29 March 2013
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