| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors |
| FENG Qian1,2**, DU Kai1,2, LI Yu-Kun1,2, SHI Peng1,2, FENG Qing1,2 |
1School of Microelectronics, Xidian University, Xi'an 710071
2Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
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| Cite this article: |
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FENG Qian, DU Kai, LI Yu-Kun et al 2013 Chin. Phys. Lett. 30 127302 |
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Abstract Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results.
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Received: 22 July 2013
Published: 13 December 2013
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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