| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe |
| CHEN Ping1, ZHAO De-Gang1**, FENG Mei-Xin1,2, JIANG De-Sheng1, LIU Zong-Shun1, ZHANG Li-Qun2, LI De-Yao2, LIU Jian-Ping2, WANG Hui2, ZHU Jian-Jun2, ZHANG Shu-Ming2, ZHANG Bao-Shun2, YANG Hui1,2 |
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
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| Cite this article: |
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CHEN Ping, ZHAO De-Gang, FENG Mei-Xin et al 2013 Chin. Phys. Lett. 30 104205 |
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Abstract An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.
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Received: 16 May 2013
Published: 21 November 2013
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.82.Et
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(Waveguides, couplers, and arrays)
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81.05.Ea
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(III-V semiconductors)
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