| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fine Structural and Carbon Source Analysis for Diamond Crystal Growth using an Fe-Ni-C System at High Pressure and High Temperature |
| FAN Xiao-Hong1,2,XU Bin2**,NIU Zhen2,ZHAI Tong-Guang3,TIAN Bin2 |
1School of Material Science and Engineering, Shandong University, Ji'nan 250101
2School of Materials Science and Engineering, Shandong Jianzhu University, Ji'nan 250101
3Department of Chemical and Materials Engineering, University of Kentucky, Lexington, USA |
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| Cite this article: |
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FAN Xiao-Hong, XU Bin, NIU Zhen et al 2012 Chin. Phys. Lett. 29 048102 |
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Abstract Diamond is synthesized in an Fe-Ni-C system at high pressure and high temperature, the C sp3 content profile through different thicknesses of interface between diamond and the catalyst film is measured by using electron energy loss spectroscopy. It is found that the C sp3 content varies from 87.33% to 78.15% when the measured position is located at the inner face near the diamond and then changes to 6 µm further away. Transmission electron microscope examinations show that there are different phases in the interface, such as Fe3C, γ−(Fe,Ni), and graphite, but the graphite phase diminishes gradually towards the inner face of the interface. These results profoundly indicate that the carbon atoms, required for diamond growth, could only come from the carbon-rich phase, Fe3C, but not directly from the graphite. It is possible that carbon atoms from the graphite in the interface first react with Fe atoms to produce carbide Fe3C during diamond synthesis at high pressure and high temperature. The Fe3C finally decomposes into carbon atoms with the sp3 electron state at the interface to form the diamond.
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Received: 08 December 2011
Published: 04 April 2012
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