Chin. Phys. Lett.  2012, Vol. 29 Issue (4): 047701    DOI: 10.1088/0256-307X/29/4/047701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Switchable Ferroelectric Diode Effect and Piezoelectric Properties of Bi0.9La0.1FeO3 Ceramics
GONG Yu-Fei1,WU Ping1,LIU Wei-Fang1**,WANG Shou-Yu2,LIU Guang-Yao3,RAO Guang-Hui4
1Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low-Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072
2College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387
3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
4Department of Information Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004
Cite this article:   
GONG Yu-Fei, WU Ping, LIU Wei-Fang et al  2012 Chin. Phys. Lett. 29 047701
Download: PDF(708KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Multiferroic ceramics Bi0.9La0.1FeO3 are synthesized by solid−state reactions and sintered at various temperatures. The rhombohedral structure with the space group R3c is confirmed by means of x−ray diffraction, and their multiferroic properties are investigated. Bi0.9La0.1FeO3 ceramics sintered at 880°C are found to have the lowest leakage current density and the largest saturated polarization among all the samples. A diode−like current-voltage hysteresis that could be switched by an external voltage is observed in the Bi0.9La0.1FeO3 ceramics. A typical "butterfly" shaped strain−versus-voltage curve is shown with a maximum strain of 0.09% at 7 kV. Room-temperature magnetization exhibits a hysteresis loop, indicating that the modulation of the spin structure of BiFeO3 has been suppressed.
Received: 27 December 2011      Published: 04 April 2012
PACS:  77.22.Ej (Polarization and depolarization)  
  77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)  
  61.10.Nz  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/29/4/047701       OR      https://cpl.iphy.ac.cn/Y2012/V29/I4/047701
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
GONG Yu-Fei
WU Ping
LIU Wei-Fang
WANG Shou-Yu
LIU Guang-Yao
RAO Guang-Hui
[1] Kumar M M, Palkar V R, Srinivas K and Suryanarayana S V 2000 Appl. Phys. Lett. 76 2764
[2] Fiebig M 2005 J. Phys. D 38 R123
[3] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wultig M and Ramesh R 2003 Science 299 1719
[4] Wang S Y, Qiu X, Gao J, Feng Y, Su W N, Zheng J X, Yu D S and Li D J 2011 Appl. Phys. Lett. 98 152902
[5] Yuan G L, Baba Kishi K Z, Liu J M, Or S W, Wang Y P and Liu Z G 2006 J. Am. Ceram. Soc. 89 3136
[6] Yuan G L and Or S W 2006 Appl. Phys. Lett. 88 062905
[7] Yuan G L and Or S W 2006 J. Appl. Phys. Lett. 100 024109
[8] Yan Z, Wang K F, Qu J F, Wang Y, Song Z T and Feng S L 2007 Appl. Phys. Lett. 91 082906
[9] Wang Y and Nan C W 2008 J. Appl. Phys. 103 024103
[10] Wang Y and Nan C W 2006 Appl. Phys. Lett. 89 052903
[11] Qi X D, Dho J, Tomov R, Blamire M G and MacManus Driscoll J L 2006 Appl. Phys. Lett. 86 062903
[12] Chung C F, Lin J P and Wu J M 2006 Appl. Phys. Lett. 88 242909
[13] Liu S Q, Wu N J and Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[14] Hamaguchi M, Aoyama K, Asanuma S, Uesu Y and Katsufuji T 2006 Appl. Phys. Lett. 88 142508
[15] Hasan M, Dong R, Choi H J, Lee D S, Seong D J, Pyun M B and Hwang H 2008 Appl. Phys. Lett. 92 202102
[16] Choi T, Lee S, Choi Y J, Kiryukhin V and Cheong S W 2009 Science 324 85
[17] Yang C H, Seidel J, Kim S Y, Rossen P B, Yu P, Gajek M, Chu Y H, Martin L W, Holcomb M B, He Q, Maksymovych P, Balke N, Kalinin S V, Baddorf A P, Basu S R, Scullin M L and Ramesh R 2009 Nature Mater. 8 485
[18] Li M, Zhuge F, Zhu X J, Yin K B, Wang J Z, Liu Y W, He C L, Chen B and Li R W 2010 Nanotechnology 21 425202
[19] Wang C, Jin K J, Xu Z T, Wang L, Ge C, Lu H B, Guo H Z, He M and Yang G Z 2011 Appl. Phys. Lett. 98 192901
[20] Jiang A Q, Wang C, Jin K J, Liu X B, Scott F, Hwang C S, Tang T A, Lu H B and Yang G Z 2011 Adv. Mater. 23 1277
[21] Rietveld H M 1967 Acta Crystallogr. 22 151
[22] Young R Y, Sakthirel A, Moss T S and Paiva Santos C O 1995 J. Appl. Crystallogr. 28 366
[23] Uchida H, Ueno R, Funakubo H and Koda S 2006 J. Appl. Phys. 100 014106
[24] Simoes A Z, Aguiar E C, Gonzalez A H M, Andres J, Longo E and Varela J A 2008 J. Appl. Phys. 104 104115
[25] Rojac T, Kosec M, Budic B, Setter N and Damjanovic D 2010 J. Appl. Phys. 108 074107
[26] Sosnowska I, Lowenhaupt M, David W I F and Ibberson R M 1992 Physica B 180 674
Related articles from Frontiers Journals
[1] Wei Zhang , Chao Wang , Jian-Wei Lian , Jun Jiang, and An-Quan Jiang. Erasable Ferroelectric Domain Wall Diodes[J]. Chin. Phys. Lett., 2021, 38(1): 047701
[2] Qiang-zhong Wang, Gang Wang, Fa-xin Li. Precise, Long-Time Displacement Self-Sensing of Piezoelectric Cantilever Actuators Based on Charge Measurement Using the Sawyer–Tower Circuit[J]. Chin. Phys. Lett., 2018, 35(10): 047701
[3] LIU Fei, SHAO Xiao-Peng, XIANGLI Bin, GAO Ying, HAN Ping-Li, WANG Lin. Effects of Finite Surface on Polarization State of Thermal Emission[J]. Chin. Phys. Lett., 2015, 32(11): 047701
[4] CHEN Gang-Jin, LEI Ming-Feng, XIAO Hui-Ming, WU Ling. Unique Charge Storage Characteristics of FEP/THV/FEP Sandwich Electret Membrane Polarized by Thermally Charging Technology[J]. Chin. Phys. Lett., 2014, 31(12): 047701
[5] LV Xin, WANG Nan, CHEN Xiang-Ming. Evolution from Diffuse Ferroelectric to Relaxor Ferroelectric in Pb1?xBax(Fe1/2Nb1/2)O3 Solid Solutions[J]. Chin. Phys. Lett., 2014, 31(07): 047701
[6] WANG Zhi-Zhu, JIANG Yi-Xuan, ZHANG Pan, WANG Xing-Zhe, HE Hong-Liang. Depolarization and Electrical Response of Porous PZT 95/5 Ferroelectric Ceramics under Shock Wave Compression[J]. Chin. Phys. Lett., 2014, 31(07): 047701
[7] ZOU Ya-Yi, CHEW Khian-Hooi, ZHOU Yan. Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions[J]. Chin. Phys. Lett., 2013, 30(10): 047701
[8] YAN Ren-Jie, WU Jing-Hua, LI Cong, XU Gao-Jie, ZHOU Lu-Wei. Temperature Effects of Electrorheological Fluids Based on One-Dimensional Calcium and Titanium Precipitate[J]. Chin. Phys. Lett., 2013, 30(1): 047701
[9] HU Liang, WANG Hai-Peng, LI Liu-Hui, WEI Bing-Bo. Electrostatic Levitation of Plant Seeds and Flower Buds[J]. Chin. Phys. Lett., 2012, 29(6): 047701
[10] ZHAO Liang,SHEN Ming-Rong*,CAO Wen-Wu. Pyroelectric Study on Dipolar Alignment in 0.69Pb(Mg1/3Nb2/3)O3−0.31PbTiO3 Single Crystals[J]. Chin. Phys. Lett., 2012, 29(4): 047701
[11] LIU Xiao-Bing, MENG Jian-Wei, JIANG An-Quan**, WANG Jian-Lu . Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films[J]. Chin. Phys. Lett., 2011, 28(10): 047701
[12] ZHANG Hong-Ling, WANG Gen-Shui, CHEN Xue-Feng, CAO Fei, DONG Xian-Lin**, GU Yan, HE Hong-Liang, LIU Yu-Sheng . Mechanism of the Pyroelectric Response under Direct-Current Bias in La-Modified Lead Zirconate Titanate Stannate Ceramics[J]. Chin. Phys. Lett., 2011, 28(9): 047701
[13] WANG Chun-Mei, DUAN Yi-Feng, CHEN Chang-Qing. First-Principles Study of Tetragonal BaTiO3 Subjected to Uniaxial Tensile Stress along the c Axis[J]. Chin. Phys. Lett., 2009, 26(1): 047701
[14] HAO Guo-Dong, CHEN Yong-Hai. Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN[J]. Chin. Phys. Lett., 2008, 25(11): 047701
[15] JIANG Yan-Ping, TANG Xin-Gui, LIU Qiu-Xiang, ZHOU Yi-Chun, CHAN-WONG Lai-Wa. Dielectric and Pyroelectric Properties of (Pb0.50Sr0.50)TiO3 Ceramics[J]. Chin. Phys. Lett., 2008, 25(8): 047701
Viewed
Full text


Abstract