| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A 50–60 V Class Ultralow Specific on-Resistance Trench Power MOSFET |
| HU Sheng-Dong1,2**, ZHANG Ling1, CHEN Wen-Suo2, LUO Jun2, TAN Kai-Zhou2, GAN Ping1, ZHU Zhi1, WU Xing-He1 |
1College of Communication Engineering, Chongqing University, Chongqing 400044
2No. 24 Research Institute, China Electronics Technology Group Corporation, Chongqing 400060
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| Cite this article: |
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HU Sheng-Dong, ZHANG Ling, CHEN Wen-Suo et al 2012 Chin. Phys. Lett. 29 128502 |
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Abstract A 50–60 V class ultralow specific on-resistance (Ron,sp) trench power MOSFET is proposed. The structure is characterized by an n+-layer which is buried on the top surface of the p-substrate and connected to the drain n+-region. The low-resistance n+-layer shortens the motion-path in high-resistance n? drift region for the carriers, and therefore, reduces the Ron,sp in the on-state. Electrical characteristics for the proposed power MOSFET are analyzed and discussed. The 50–60 V class breakdown voltages (VB) with Ron,sp less than 0.35 mΩ?cm2 are obtained. Compared with several power MOSFETs, the proposed power MOSFET has a significantly optimized dependence of Ron,sp on VB.
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Received: 22 August 2012
Published: 04 March 2013
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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