| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric |
| LIU Hong-Xia, MA Fei** |
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071
|
|
| Cite this article: |
|
LIU Hong-Xia, MA Fei 2012 Chin. Phys. Lett. 29 127301 |
|
|
|
|
Abstract The off-state leakage current characteristics of nanoscale channel metal-oxide-semiconductor field-effect transistors with a high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components: the gate leakage current, the source leakage current, and the substrate leakage current. The influences of the fringing-induced barrier lowering effect and the drain-induced barrier lowering effect on each component are investigated separately. For nanoscale devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current.
|
|
|
Received: 08 June 2012
Published: 04 March 2013
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
73.61.Ng
|
(Insulators)
|
| |
73.22.-f
|
(Electronic structure of nanoscale materials and related systems)
|
|
|
|
|
|
[1] Tan S Y 2007 Microelectron. J. 38 783
[2] Robertson J 2004 Eur. Phys. J. Appl. Phys. 28 265
[3] Lee B H, Oh J, Tseng H H, Jammy R and Hff H 2006 Mater. Today 9 32
[4] Lu Q, Park D, Kalnitsky A, Chang C, Cheng C, Tay S P, King T J and Hu C 1998 IEEE Electron Device Lett. 19 341
[5] Kencke D L, Chen W, Wang H, Mudanai S, Quyag Q, Tashch A and Banerjee S K 1999 Proc. 57th Annual Device Research Conference Digest ( Santa Barbara, CA 28–30 June 1999) p 22
[6] Chen Q, Wang L H and Meindl J D 2005 Solid-State Electron. 49 271
[7] Chiang T K and Chen M L 2007 Solid-State Electron. 51 387
[8] Mohapatra N R, Desai M P and Rao V R 2003 Proc. 16th International Conference on VLSI Design (Washington DC 4–8 January 2003) p 99
[9] Yeap G C F, Krishnan S and Lin M R 1998 Electron. Lett. 34 1150
[10] Tsui B Y and Chin L F 2004 IEEE Trans. Electron Devices 51 1733
[11] Autran J L, Munteanu D, Bescond M, Houssa M and Said A 2005 J. Non-Cryst. Solids 351 1897
[12] Huang H S, Huang C H, Wu Y C, Hsu Y K, Chen J K and Hong G 2003 Jpn. J. Appl. Phys. 42 2628
[13] Yang J H, Li G F and Liu H L 2008 Proc. 2nd IEEE International Nanoelectronics Conference (Shanghai, 24–27 March 2008) p 1189
[14] Ma F, Liu H X, Kuang Q W and Fan J B 2012 Chin. Phys. B 21 057305
[15] Kaushik R, Saibal M and Hamid M M 2003 Proc. IEEE 91 305
[16] Allan A, Edenfeld D, Joyner W H Jr, Kahng A B, Rodgers M and Zorian Y 2002 IEEE Computer 35 42 (2001 Technology Roadmap for Semiconductors)
[17] Xie L S, Chen X L and Xu Y S 1989 Chin. J. Semicond. 10 227 (in Chinese)
[18] Xie Q, Xu J, Ren T L and Taur Y 2010 Semiconductor Sci. Technol. 25 035012 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
