Chin. Phys. Lett.  2012, Vol. 29 Issue (12): 127301    DOI: 10.1088/0256-307X/29/12/127301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric
LIU Hong-Xia, MA Fei**
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071
Download: PDF(646KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The off-state leakage current characteristics of nanoscale channel metal-oxide-semiconductor field-effect transistors with a high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components: the gate leakage current, the source leakage current, and the substrate leakage current. The influences of the fringing-induced barrier lowering effect and the drain-induced barrier lowering effect on each component are investigated separately. For nanoscale devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current.
Received: 08 June 2012      Published: 04 March 2013
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.Ng (Insulators)  
  73.22.-f (Electronic structure of nanoscale materials and related systems)  
TRENDMD:   
Cite this article:   
LIU Hong-Xia, MA Fei 2012 Chin. Phys. Lett. 29 127301
URL:  
http://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/127301       OR      http://cpl.iphy.ac.cn/Y2012/V29/I12/127301
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LIU Hong-Xia
MA Fei
[1] Tan S Y 2007 Microelectron. J. 38 783
[2] Robertson J 2004 Eur. Phys. J. Appl. Phys. 28 265
[3] Lee B H, Oh J, Tseng H H, Jammy R and Hff H 2006 Mater. Today 9 32
[4] Lu Q, Park D, Kalnitsky A, Chang C, Cheng C, Tay S P, King T J and Hu C 1998 IEEE Electron Device Lett. 19 341
[5] Kencke D L, Chen W, Wang H, Mudanai S, Quyag Q, Tashch A and Banerjee S K 1999 Proc. 57th Annual Device Research Conference Digest ( Santa Barbara, CA 28–30 June 1999) p 22
[6] Chen Q, Wang L H and Meindl J D 2005 Solid-State Electron. 49 271
[7] Chiang T K and Chen M L 2007 Solid-State Electron. 51 387
[8] Mohapatra N R, Desai M P and Rao V R 2003 Proc. 16th International Conference on VLSI Design (Washington DC 4–8 January 2003) p 99
[9] Yeap G C F, Krishnan S and Lin M R 1998 Electron. Lett. 34 1150
[10] Tsui B Y and Chin L F 2004 IEEE Trans. Electron Devices 51 1733
[11] Autran J L, Munteanu D, Bescond M, Houssa M and Said A 2005 J. Non-Cryst. Solids 351 1897
[12] Huang H S, Huang C H, Wu Y C, Hsu Y K, Chen J K and Hong G 2003 Jpn. J. Appl. Phys. 42 2628
[13] Yang J H, Li G F and Liu H L 2008 Proc. 2nd IEEE International Nanoelectronics Conference (Shanghai, 24–27 March 2008) p 1189
[14] Ma F, Liu H X, Kuang Q W and Fan J B 2012 Chin. Phys. B 21 057305
[15] Kaushik R, Saibal M and Hamid M M 2003 Proc. IEEE 91 305
[16] Allan A, Edenfeld D, Joyner W H Jr, Kahng A B, Rodgers M and Zorian Y 2002 IEEE Computer 35 42 (2001 Technology Roadmap for Semiconductors)
[17] Xie L S, Chen X L and Xu Y S 1989 Chin. J. Semicond. 10 227 (in Chinese)
[18] Xie Q, Xu J, Ren T L and Taur Y 2010 Semiconductor Sci. Technol. 25 035012
Related articles from Frontiers Journals
[1] Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 127301
[2] Bin-Xu, Jing-Ping Xu, Lu Liu, Yong Su. Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content[J]. Chin. Phys. Lett., 2018, 35(7): 127301
[3] Zhao-Zhao Hou, Gui-Lei Wang, Jia-Xin Yao, Qing-Zhu Zhang, Hua-Xiang Yin. Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel[J]. Chin. Phys. Lett., 2018, 35(5): 127301
[4] Qi-Wen Zheng, Jiang-Wei Cui, Ying Wei, Xue-Feng Yu, Wu Lu, Diyuan Ren, Qi Guo. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs[J]. Chin. Phys. Lett., 2018, 35(4): 127301
[5] Ya-Yi Chen, Yuan Liu, Zhao-Hui Wu, Li Wang, Bin Li, Yun-Fei En, Yi-Qiang Chen. Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator[J]. Chin. Phys. Lett., 2018, 35(4): 127301
[6] Can Li, Cong-Wei Liao, Tian-Bao Yu, Jian-Yuan Ke, Sheng-Xiang Huang, Lian-Wen Deng. Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs[J]. Chin. Phys. Lett., 2018, 35(2): 127301
[7] Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang, Jia-Xin Yao, Zhen-Hua Wu, Qing-Zhu Zhang, Hua-Xiang Yin. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-$\kappa$ Dielectrics and SiGe Epitaxial Substrates[J]. Chin. Phys. Lett., 2017, 34(9): 127301
[8] Sheng-Kai Wang, Lei Ma, Hu-Dong Chang, Bing Sun, Yu-Yu Su, Le Zhong, Hai-Ou Li, Zhi Jin, Xin-Yu Liu, Hong-Gang Liu. Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al$_{2}$O$_{3}$ Dielectric[J]. Chin. Phys. Lett., 2017, 34(5): 127301
[9] Han-Han Lu, Jing-Ping Xu, Lu Liu. Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer[J]. Chin. Phys. Lett., 2017, 34(4): 127301
[10] Yuan Liu, Kai Liu, Rong-Sheng Chen, Yu-Rong Liu, Yun-Fei En, Bin Li, Wen-Xiao Fang. Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors[J]. Chin. Phys. Lett., 2017, 34(1): 127301
[11] Yi-Tao He, Ming Qiao, Lu Li, Gang Dai, Bo Zhang, Zhao-Ji Li. A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting[J]. Chin. Phys. Lett., 2016, 33(09): 127301
[12] Qi-Wen Zheng, Jiang-Wei Cui, Hang Zhou, De-Zhao Yu, Xue-Feng Yu, Qi Guo. Hot-Carrier Effects on Total Dose Irradiated 65nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors[J]. Chin. Phys. Lett., 2016, 33(07): 127301
[13] Lan-Feng Tang, Hai Lu, Fang-Fang Ren, Dong Zhou, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang,. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination[J]. Chin. Phys. Lett., 2016, 33(03): 127301
[14] SHEN Hua-Jun, TANG Ya-Chao, PENG Zhao-Yang, DENG Xiao-Chuan, BAI Yun, WANG Yi-Yu, LI Cheng-Zhan, LIU Ke-An, LIU Xin-Yu. Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(12): 127301
[15] XIANG Lan-Yi, YING Jun, HAN Jin-Hua, WANG Wei, XIE Wen-Fa. Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(09): 127301
Viewed
Full text


Abstract