| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu 3Ti4O12 and Pt |
| CHEN Cong1,2, NING Ting-Yin2, WANG Can2**, ZHOU Yue-Liang2,ZHANG Dong-Xiang2, WANG Pei1, MING Hai1, YANG Guo-Zhen2
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1Anhui Key Laboratory of Optoelectronic Science and Technology, University of Science and Technology of China, Hefei 230026
2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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CHEN Cong, NING Ting-Yin, WANG Can et al 2011 Chin. Phys. Lett. 28 087304 |
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Abstract CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO−covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow J=JsD exp[qV/(k0T)]. A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.
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| Keywords:
73.20.At
73.40.Sx
73.30.+y
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Received: 06 January 2011
Published: 28 July 2011
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.40.Sx
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(Metal-semiconductor-metal structures)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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