| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Reduction of the Far-Field Divergence Angle of an 850nm Multi-Leaf Holey Vertical Cavity Surface Emitting Laser |
| ZHOU Kang**, XU Chen, XIE Yi-Yang, ZHAO Zhen-Bo, LIU Fa, SHEN Guang-Di
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Key Laboratory of Opto-electronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124
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| Cite this article: |
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ZHOU Kang, XU Chen, XIE Yi-Yang et al 2011 Chin. Phys. Lett. 28 084209 |
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Abstract By introducing multi-leaf sectorial holes into an oxidation confined 850 nm vertical cavity surface emitting laser (VCSEL), the far-field divergence angle is reduced. The finite-difference time-domain method is used to simulate the far-field pattern of the multi-leaf holey VCSEL with different etching depths and different shapes of the oxide aperture in diameter R. Based on the simulation result, we design and fabricate a multi−leaf holey VCSEL and its divergence angle is only 6°. The experimental results agree well with the theoretical predication.
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| Keywords:
42.55.Px
42.60.Jf
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Received: 04 May 2011
Published: 28 July 2011
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Jf
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(Beam characteristics: profile, intensity, and power; spatial pattern formation)
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