| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Comparative Studies on the Laser Damage Resistance of Ta2O5 and Nb2O5 Films Performed under Different Electron Beam Currents |
| XU Cheng1,2**, XU Lin-Min1, ZHANG Han-Zhuo1, QIANG Ying-Huai1, ZHU Ya-Bo1, LIU Jiong-Tian2, SHAO Jian-Da3
|
1School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116
2School of Chemical Engineering and Technology, China University of Mining and Technology, Xuzhou 221116
3Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
|
|
| Cite this article: |
|
XU Cheng, XU Lin-Min, ZHANG Han-Zhuo et al 2011 Chin. Phys. Lett. 28 064211 |
|
|
|
|
Abstract Ta2O5 and Nb2O5 films are deposited by conventional e−beam method under different electron beam currents. The optical transmittance, chemical composition, absorption, scattering, surface topography and laser-induced damage threshold (LIDT) of the films are comparatively studied. It is shown that the increase of electron beam current results in a decrease of the optical transmittance and stoichiometry, whereas it increases the absorption, scattering and rms roughness for both Ta2O5 and Nb2O5 films. However, the LIDT increases first and then decreases with the increase of electron beam current. In addition, the annealing improves the optical transmittance, stoichiometry and LIDT for the two kinds of films. Both the effects of electron beam current and annealing on the LIDT can be mainly attributed to three factors: substoichiometric defects, structural defects and adhesive force. Furthermore, the comparative results indicate that the laser damage resistance of Ta2O5 is lower than that of Nb2O5.
|
| Keywords:
42.79.-e
68.60.-p
81.15.Ef
|
|
|
Received: 03 December 2010
Published: 29 May 2011
|
|
| PACS: |
42.79.-e
|
(Optical elements, devices, and systems)
|
| |
68.60.-p
|
(Physical properties of thin films, nonelectronic)
|
| |
81.15.Ef
|
|
|
|
|
|
|
[1] Wolfe C R et al 1989 Proc. SPIE 1438 360
[2] Xu C, Ma J et al 2008 Chin. Phys. Lett. 25 1321
[3] Xu C, Qiang Y et al 2010 Opt. Laser Technol. 42 497
[4] Manifacier J C et al 1976 J. Phys. E: Sci. Instrum. 9 1002
[5] He H B et al 2005 Proc. SPIE 5991 59912F
[6] Zhao Y A et al 2003 Appl. Surf. Sci. 210 353
[7] Hu H, Fan Z and Luo F 2001 Appl. Opt. 40 1950
[8] ISO 11254-1:2000: Lasers and Laser-Related Equipment–Determination of Laser-Induced Damage Threshold of Optical Surfaces (Washington DC: American National Standards Instigute) part 1
[9] Masse J -P et al 2006 Thin Solid Films 515 1674
[10] Atuchin V V et al 2009 Chem. Phys. 360 74
[11] Atuchin V V et al 2008 J. Solid State Chem. 181 1285
[12] Zhang D P et al 2006 Opt. Laser Technol. 38 654
[13] Xu C, Qiang Y et al 2010 Vacuum 84 1310
[14] Jones S C et al 1989 Opt. Eng. 28 1039
[15] Abromavicius G et al 2006 Proc. SPIE 6403 640315
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
