| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Deep Energy Levels Formed by Se Implantation in Si |
| GAO Li-Peng, HAN Pei-De**, MAO Xue, FAN Yu-Jie, HU Shao-Xu, ZHAO Chun-Hua, MI Yan-Hong
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State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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GAO Li-Peng, HAN Pei-De, MAO Xue et al 2011 Chin. Phys. Lett. 28 036108 |
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Abstract To transfer a photon with a 1.55 μm wavelength into an electron in an integrated optoelectronic silicon waveguide detector, selenium-doped silicon with deep energy levels is used. The deep levels in the silicon with implanted selenium are studied. Three levels are observed and their captured cross sections, concentrations and in-depth profiles are measured.
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| Keywords:
61.72.uf
71.55.-i
42.79.Pw
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Received: 02 September 2010
Published: 28 February 2011
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