Chin. Phys. Lett.  2011, Vol. 28 Issue (12): 128202    DOI: 10.1088/0256-307X/28/12/128202
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
An X-Ray Diffraction and Thermogravimetric Study of Layered Perovskite Y1−xBixBaCo4O7
ZHANG Ya-Mei1**, HAN Ru-Qu1, WU Xiao-Shan2, WANG Zhi-He2
1Jiangsu University of Science and Technology, Zhenjiang 212003
2 Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093
Cite this article:   
ZHANG Ya-Mei, HAN Ru-Qu, WU Xiao-Shan et al  2011 Chin. Phys. Lett. 28 128202
Download: PDF(845KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Layer-structured oxides Y1−xBixBaCo4O7(0.00 ≤ x ≤ 0.05) were successfully synthesized and their structural and oxygen absorption properties were investigated by x−ray diffraction and thermogravimetry. Though Bi solubility was limited to about 5%, corresponding to Y0.95Bi0.05BaCo4O7, it is found that the structure and oxygen absorption properties of Y1−xBixBaCo4O7 are affected significantly as the Bi content x increases. Rietveld refinement results show that Y1−xBixBaCo4O7(x ≤ 0.05) is single phase with a hexagonal crystal structure (space group P63mc). Unit cell parameters and volume are changed and CoO4 tetrahedra are distorted along the c−axis in Bi doped YBaCo4O7. The TG results show that Y1−xBixBaCo4O7 undergoes two oxygen absorption processes in oxygen from room temperature to 1000°C and the maximum mass increase of the doped samples is less than that of YBaCo4O7. Bi doping effects on the structure and oxygen absorption properties are discussed on the basis of average radius and disorder of the Y site, the valence of Bi and the oxygen activation energy.
Keywords: 82.75.-z      82.75.Fq      61.05.cp     
Received: 26 July 2011      Published: 29 November 2011
PACS:  82.75.-z (Molecular sieves, zeolites, clathrates, and other complex solids)  
  82.75.Fq (Synthesis, structure determination, structure modeling)  
  61.05.cp (X-ray diffraction)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/28/12/128202       OR      https://cpl.iphy.ac.cn/Y2011/V28/I12/128202
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHANG Ya-Mei
HAN Ru-Qu
WU Xiao-Shan
WANG Zhi-He
[1] Valldor M, Andersson M 2002 Solid State Sci. 4 923
[2] Maignan A, Caignaert V, Pelloquin D, Hébert S, Pralong V, Hejtmanek J and Khomskii D 2006 Phys. Rev. B 74 165110
[3] Sarkar T, Caignaert V, Pralong V and Raveau B 2010 Chem. Mater. 22 6467
[4] Valldor M 2006 Solid State Sci. 8 1272
[5] Wang S, Hao H S, Zhu B F, Jia J F and Hu X 2008 J. Mater. Sci. 43 5385
[6] Hao H S, Cui J H, Chen C Q, Pan L J, Hu J and Hu X 2006 Solid State Ionics 177 631
[7] Zhu B F, Hao H S, Zhang Y, Jia J F and Hu X 2010 J. Rare Earths (Engl. Ed) 28 84
[8] Chmaissem O, Zheng H, Huq A, Stephens P W and Mitchell J F 2008 J. Solid State Chem. 181 664
[9] Zhang K, Zhu Z H, Ran R, Shao Z P, Jin W Q and Liu S M 2010 J. Alloys Compd. 492 552
[10] B H Toby and EXPGUI 2001 J. Appl. Cryst. 34 210
Related articles from Frontiers Journals
[1] SUN Bing, CHANG Hu-Dong, LU Li, LIU Hong-Gang, WU De-Xin. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy[J]. Chin. Phys. Lett., 2012, 29(3): 128202
[2] CHENG Feng-Feng , FA Tao, WANG Xin-Qiang, YAO Shu-De. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling[J]. Chin. Phys. Lett., 2012, 29(2): 128202
[3] TENG Long, ZHANG Rong, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou. Raman Scattering Study of InxGa1−xN Alloys with Low Indium Compositions[J]. Chin. Phys. Lett., 2012, 29(2): 128202
[4] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 128202
[5] FAN Da-Wei**, WEI Shu-Yi, LIU Jing, LI Yan-Chun, XIE Hong-Sen . High Pressure X-Ray Diffraction Study of a Grossular–Andradite Solid Solution and the Bulk Modulus Variation along this Solid Solution[J]. Chin. Phys. Lett., 2011, 28(7): 128202
[6] DING Bin-Beng, PAN Feng, FENG Zhe-Chuan, FA Tao, CHENG Feng-Feng, YAO Shu-De** . Structural Analysis of In xGa1−xN/GaN MQWs by Different Experimental Methods[J]. Chin. Phys. Lett., 2011, 28(7): 128202
[7] DUAN Li**, GAO Wei . Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering[J]. Chin. Phys. Lett., 2011, 28(3): 128202
[8] WANG Yue, WU Da-Jian, YANG Yue-Tao, LIU Xiao-Jun** . Nd-Doping Induced Lattice Distortion in TiO2 Nanoparticles[J]. Chin. Phys. Lett., 2011, 28(2): 128202
[9] GUO Xiao-Song, BAO Zhong, ZHANG Shan-Shan, XIE Er-Qing** . A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(2): 128202
[10] ZHOU Zhi-Feng, QIN Fu-Wen, **, ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 128202
[11] GUO Xiao-Song, ZHANG Shan-Shan, BAO Zhong, ZHANG Hong-Liang, CHEN Chang-Cheng, LIU Li-Xin, LIU Yan-Xia, XIE Er-Qing** . Effect of Substrate Temperature on the Structural, Electrical and Optical Properties of Nanocrystalline Silicon Films in Hot-Filament Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(2): 128202
[12] FAN Da-Wei**, MA Mai-Ning, YANG Jun-Jie, WEI Shu-Yi, CHEN Zhi-Qiang, XIE Hong-Sen . In situ High-Pressure Synchrotron X-Ray Diffraction Study of Clinozoisite[J]. Chin. Phys. Lett., 2011, 28(12): 128202
[13] G. D. Prasanna, H. S. Jayanna*, Ashok R Lamani, M. L. Dinesha, C. S. Naveen, G. J. Shankaramurthy . Low-Frequency Dependence of Conductivity and Dielectric Properties of Polyaniline/ZnFe2O4 Nanocomposites[J]. Chin. Phys. Lett., 2011, 28(11): 128202
[14] DING Bin-Feng**, LI Yong-Ping, WANG Li-Ming . Structural and Magnetic Properties of Ni-Implanted Rutile Single Crystals[J]. Chin. Phys. Lett., 2011, 28(10): 128202
[15] LIU Xing-Long, QIN Fu-Wen, **, BIAN Ji-Ming, ZHANG Dong, CHEN Wei-Ji, ZHOU Zhi-Feng, ZHI An-Bo, YU Bo, WU Ai-Min, JIANG Xin, . The Preparation and Characteristics of InxGa1−xN (0.06≤x≤0.58) Films Deposited by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(10): 128202
Viewed
Full text


Abstract