| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch |
| SHI Wei1**, MA Xiang-Rong1,2
|
1Department of Applied Physics, Xi'an University of Technology, Xi'an 710048
2Institute of Physics and Electionic Enginerting, Xinjiang Normal University, Urumqi 830054 |
|
| Cite this article: |
|
SHI Wei, MA Xiang-Rong 2011 Chin. Phys. Lett. 28 124201 |
|
|
|
|
Abstract Unique experimental phenomena are discovered in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch (PCSS) and the peculiar transmission characteristics are exhibited in the experiment. The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS. By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS, a detailed statistical analysis and theoretical explanations are expounded. The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation (LSA) mode when the conditions of 5×104 s⋅cm−3 ≤ n0/f ≤ 3×105 s⋅cm−3 and n0 L ≥ 1013 cm−2 must be met in the switch, with n0 being carrier concentration and f the frequency. The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in) behavior at high bias voltage, so the withstand voltage and service life for PCSS are improved.
|
| Keywords:
42.65.Re
72.40.+w
|
|
|
Received: 08 June 2011
Published: 29 November 2011
|
|
| PACS: |
42.65.Re
|
(Ultrafast processes; optical pulse generation and pulse compression)
|
| |
72.40.+w
|
(Photoconduction and photovoltaic effects)
|
|
|
|
|
|
[1] Loubriel G M, Zutavern F J, Baca A G, Hjalmarson H P, Plut T A and Helgeson W D 1997 IEEE Trans Plas. Sci. 25 124
[2] Islam N E, Schamiloglu E and Fledderman C B 1998 Appl. Phys. Lett. 73 1988
[3] Shi W, Zhang X B, Li Q, Chen E Z and Zhao W 2002 Chin. Phys. Lett. 19 351
[4] Shi W, Jia W L, Hou L, Xu J Z and Zhang X B 2004 Chin. Phys. Lett. 21 1842
[5] Shi W, Zhao W, Liang Z X, Sun X W 2001 Chin. Phys. Lett. 18 1479
[6] Hanmin Z, Hadizad P, Jung H H and Martin A G 1993 J. Appl. Phys. 73 1807
[7] Shi W, Tian L Q 2006 Appl. Phys. Lett. 89 2002103
[8] Shi W, Wang X M, Hou L, Xu M and Liu Z 2008 Acta Phys. Sin. 57 7185
[9] Copelang J A 1966 IEEE Proc. 54 1479
[10] Copelang J A 1967 J. Appl. Phys. 38 3096
[11] Shi W 2001 Chin. J. Semiconduct. 22 1481
[12] Shi W, Tian L Q, Liu Z, Zhang L Q and Zhang Z Z 2008 Appl. Phys. Lett. 92 043511
[13] Shi W, Qu G H, Xu M, Xue H and Ji W L 2009 Appl. Phys. Lett. 94 072110
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
