| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Analysis of Modified Williamson-Hall Plots on GaN Layers |
| LIU Jian-Qi1,2,3, QIU Yong-Xin1, WANG Jian-Feng1, XU Ke1**, YANG Hui1
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1Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125
2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3Graduated University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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LIU Jian-Qi, QIU Yong-Xin, WANG Jian-Feng et al 2011 Chin. Phys. Lett. 28 016101 |
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Abstract Williamson–Hall (W-H) analysis is often used to separate the lateral coherence length (LCL) broadening and dislocation broadening on the ω−scan with a Lorentzian distribution. However, besides the LCL broadening and dislocation broadening, curvature also can broaden the ω−scan peak. Usually, the ω−scan can be described by a Pseudo-Voigt (P-V) function more precisely than a Lorentzian function. Based on the P-V fit peak profile, we modify the W-H plots. Both LCL broadening and curvature broadening can be eliminated from (00l) ω-scans plots simultaneously, and a reliable tilt can be obtained. This method is a good complementary for the existing method, but is more convenient. Although we focuse on GaN layers, the results are applicable to a wide range of other materials having mosaic structures.
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| Keywords:
61.05.Cp
81.05.Ea
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Received: 12 May 2010
Published: 23 December 2010
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