| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation |
HE Jun1,2, LI Ming1,2, D. H. Kim2, J. C. Lee2, D. J. Lee2, FU De-Jun1, T. W. Kang2 |
| 1Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 2Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, 3-26 Seoul 100-715, Korea |
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HE Jun, LI Ming, D. H. Kim et al 2010 Chin. Phys. Lett. 27 078501 |
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Abstract Polycrystalline CdMnS and CdMnS:Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS:Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS:Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77k
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| Keywords:
85.50.Gk
85.30.De
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Received: 18 December 2009
Published: 28 June 2010
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| PACS: |
85.50.Gk
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(Non-volatile ferroelectric memories)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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