| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films |
| JIANG An-Quan, TANG Ting-Ao |
| ASIC and System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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JIANG An-Quan, TANG Ting-Ao 2009 Chin. Phys. Lett. 26 017701 |
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Abstract Time interval of slow polarization reversal in ferroelectric thin films is broadened over more than two decades to disobey the classical Kolmogorov-Avrami--Ishibashi (KAI) equation as the applied field approaches the coercive field of domain switching. The assumption of a Lorentzian distribution of logarithmic waiting times of reversed domain nucleation in this equation can resolve this dilemma. In our work, we explain this equation from the coercive-voltage distribution in thin films, and derive a similar function to describe slow polarization reversal from the consideration of a long-time imprint effect rather than the KAI model.
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| Keywords:
77.55.+f
77.80.Fm
73.40.-c
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Received: 06 July 2008
Published: 24 December 2008
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