Chin. Phys. Lett.  2009, Vol. 26 Issue (1): 017104    DOI: 10.1088/0256-307X/26/1/017104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Electronic Structure of Eu6C60
WANG Xiao-Xiong1,2, LI Hong-Nian1, XU Ya-Bo1, WANG1, ZHANG Wen-Hua3, XU Fa-Qiang3
1Department of Physics, Zhejiang University, Hangzhou 3100272College of Science, Nanjing University of Science and Technology, Nanjing 2100943National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029
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WANG Xiao-Xiong, LI Hong-Nian, XU Ya-Bo et al  2009 Chin. Phys. Lett. 26 017104
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Abstract We study the valence band of Eu-intercalated C60 by synchrotron radiation photoelectron spectroscopy to understand the ferromagnetism (FM) and the giant magnetoresistance (GMR) of Eu6C60. The results reveal the semiconducting property and the remarkable 5d6s-π hybridization. Eu-C60 bonding has both ionic and covalent contributions. No more than half the 5d6s electrons transfer from Eu to the LUMO derived band of C60, and the LUMO+1 derived band is not filled. The remaining valence electrons of Eu, together with some π (LUMO, HOMO and HOMO-1) electrons, constitute the covalent bond. The electronic structure implies that the magnetic coupling in Eu6C60 should be through the intra-atomic f-sd exchange and the medium of the π electrons. The possibility of the GMR being tunnelling agnetoresistance is ruled out
Keywords: 71.20.Tx      73.20.At      75.50.Dd      75.47.De     
Received: 03 October 2008      Published: 24 December 2008
PACS:  71.20.Tx (Fullerenes and related materials; intercalation compounds)  
  73.20.At (Surface states, band structure, electron density of states)  
  75.50.Dd (Nonmetallic ferromagnetic materials)  
  75.47.De (Giant magnetoresistance)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/1/017104       OR      https://cpl.iphy.ac.cn/Y2009/V26/I1/017104
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WANG Xiao-Xiong
LI Hong-Nian
XU Ya-Bo
WANG
ZHANG Wen-Hua
XU Fa-Qiang
[1] Ksari-Habiles Y et al 1997 J. Phys. Chem. Solids 58 1771
[2] Ishii K, Fujiwara A, Suematsu H and Kubozono Y 2002 Phys. Rev. B 65 134431
[3] Takenobu T et al 2003 J. Am. Chem. Soc. 1251897
[4] Zhu L, Yao K L and Liu Z L 2007 Solid State Commun. 141 628
[5] Wu J et al 1992 Physica C 197 251
[6] He S et al 2007 J. Phys.: Condens. Matter 19026202
[7] Yoshikawa H et al 1995 Chem. Phys. Lett. 239103
[8] Tjeng L H et al 1997 Solid State Commun. 10331
[9] Wang X X, Li H N and Xu Y B 2008 Solid State Commun. 147 436
[10] Wang X X, Li H N, Zhang W H and Xu F Q 2007 J.Phys.: Condens. Matter 19 096001
[11] Li H N, Wang X X and Ding W F 2006 J. ElectronSpectrosc. Relat. Phenom. 153 96
[12] Claves D, Ksari-Habiles Y, Chouteau G and Touzain Ph 1998 Solid State Commun. 106 431
[13] Yeh J J and Lindau I 1985 Atomic SubshellPhotoionization Cross Section and Asymmetry Parameters: $1\le Z\le103$ (New York: Academic) pp 7--11
[14] He S L et al 2005 Phys. Rev. B 71 085404
[15] Wang X X et al 2006 Acta Phys. Sin. 55 4265(in Chinese)
[16] Wertheim G K, Buchanan D N E and Rowe J E 1992 Science 258 1638
[17] Knupfer M, Stepniak F and Weaver J H 1994 Phys.Rev. B 49 7620
[18] Satpathy S et al 1992 Phys. Rev. B 46 1773
[19] Hoogenboom B W, Hesper R, Tjeng L H and Sawatzky G A 1998 Phys. Rev. B 57 11939
[20] Tsuei K D et al 1997 Phys. Rev. B 56 15412
[21] Li H N et al 2005 Surf. Sci. 586 65
[22] Kune\v{s J and Laskowski R 2004 Phys. Rev. B 70 174415
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