Select research field:
Chin. Phys. Lett. 6, 433-435 (1989)
Chin. Phys. Lett. 6, 436-439 (1989)
Chin. Phys. Lett. 6, 440-443 (1989)
Chin. Phys. Lett. 6, 444-447 (1989)
Chin. Phys. Lett. 6, 448-450 (1989)
REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING
Chin. Phys. Lett. 6, 451-454 (1989)
Chin. Phys. Lett. 6, 455-457 (1989)
Chin. Phys. Lett. 6, 458-460 (1989)
Chin. Phys. Lett. 6, 461-464 (1989)
Chin. Phys. Lett. 6, 465-468 (1989)
Chin. Phys. Lett. 6, 469-472 (1989)
Chin. Phys. Lett. 6, 473-476 (1989)
Chin. Phys. Lett. 6, 477-480 (1989)