REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING

4.2MeV ⁷Li channeling technique, laser Raman scattering spectrometry, and TEM have been utilized to study the regrowth of MBE-GaAs films of ~μm thick on Si substrates by Si⁺ implantation (0.6-2.6Me V) and subsequent rapid thermal annealing. The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.