1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731
Abstract：A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500–600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 500–560 GHz and is about 400 V/W at 560–600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
Woolard D L, Globus T R, Gelmont B L, Bykhovskaia M, Samuels A C, Cookmeyer D, Hesler J L, Crowe T W, Jensen J O, Jensen J L and Loerop W R 2002 Phys. Rev. E 65 051903
2016, Vol. 33 
