1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731
Abstract：A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 mV/mW at 630 GHz. The measured noise effective power (NEP) is less than 35 pW/Hz$^{0.5}$ at 570–630 GHz. The minimum NEP is 14 pW/Hz$^{0.5}$ at 630 GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
Woolard D L, Globus T R, Gelmont B L, Bykhovskaia M, Samuels A C, Cookmeyer D, Hesler J L, Crowe T W, Jensen J O, Jensen J L and Loerop W R 2002 Phys. Rev. E 65 051903
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Griffiths P R and Homes C 2001 Office of Scientific Technical Information Technical Reports
2017, Vol. 34 
