Fabrication and Piezoelectric Characterization of Single Crystalline GaN Nanobelts
WU Dong-Xu1, CHENG Hong-Bin2**, ZHENG Xue-Jun2,3**, WANG Xian-Ying2, WANG Ding2, LI Jia1
1School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093 2School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093 3School of Mechanical Engineering, Xiangtan University, Xiangtan 411105
Abstract：GaN nanobelts are synthesized using the chemical vapor deposition method with the catalyst of Ni. The microstructure, composition and photoluminescence property are characterized by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectra. The results demonstrate that the single crystalline GaN nanobelts are grown with a hexagonal wurtzite structure, in width ranging from 500 nm to 2 μm and length up to 10–20 μm. Moreover, a large piezoelectric coefficient d33 of 20 pm/V is obtained from GaN nanobelts by an atomic force microscopy and the high piezoelectric property implies that the perfect single crystallinity and the freedom of dislocation for the GaN nanobelt have significant impact on the electromechanical response.
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
引用本文:
. [J]. 中国物理快报, 2015, 32(10): 108102-108102.
WU Dong-Xu, CHENG Hong-Bin, ZHENG Xue-Jun, WANG Xian-Ying, WANG Ding, LI Jia. Fabrication and Piezoelectric Characterization of Single Crystalline GaN Nanobelts. Chin. Phys. Lett., 2015, 32(10): 108102-108102.
2015, Vol. 32 
