Observation of Self-Frequency Doubling in Diode-Pumped Mode-Locked Nd-Doped La3Ga5SiO14 Laser
LIU Jia-Xing1, WANG Zhao-Hua1**, TIAN Wen-Long2, WANG Qing3, ZHANG Zhi-Guo1, WEI Zhi-Yi1**, YU Hao-Hai4, ZHANG Huai-Jin4, WANG Ji-Yang4
1Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071 3Department of Opto-Electronics, Beijing Institute of Technology, Beijing 100081 4State Key Laboratory of Crystal Material and Institute of Crystal Material, Shandong University, Jinan 250100
Abstract:A diode-pumped passively mode-locked Nd-doped La3Ga5SiO14 (Nd:LGS) laser is realized by using a semiconductor saturable absorber mirror. With the pump power of 2 W, we obtain a 532 nm self-frequency doubling (SFD) laser together with a 10.9 ps fundamental laser at the repetition rate of 173.7 MHz. To the best of our knowledge, it is the first time for self-frequency doubling in the diode-pumped mode-locked Nd:LGS laser. Benefited from the diode lasers and its self-frequency doubling property, Nd:LGS could be a potential candidate for compact, stable and cheap ultrafast green laser sources.
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