Chemical Composition Dependent Elastic Strain in AlGaN Epilayers
WANG Huan1,2 , YAO Shu-De1**
1 State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 1008712 Chinese Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621900
Abstract ：Systematic investigations are performed on a set of Alx −x N/GaN heterostructures grown by metalorganic chemical vapor deposition on sapphire (0001). The Al composition x is determined by Rutherford backscattering. By using high resolution x-ray diffraction and the channeling scan around an off-normal <12 13> axis in {101 0} plane of the AlGaN layer, the tetragonal distortion eT caused by the elastic strain in the epilayer is determined. The results show that eT in the high-quality AlGaN layers is dramatically influenced by the Al content.
出版日期: 2014-10-31
:
61.05.cp
(X-ray diffraction)
82.80.Yc
(Rutherford backscattering (RBS), and other methods ofchemical analysis)
81.05.Ea
(III-V semiconductors)
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2014, Vol. 31 
