Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films
CHEN Zhi1 , WEN Qi-Ye2** , DONG Kai2 , SUN Dan-Dan2 , QIU Dong-Hong2 , ZHANG Huai-Wu2
1 National Key Laboratory of Science and Technology of Communication, University of Electronic Science and Technology of China, Chengdu 6100542 State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu 610054
Abstract ：Single-phase VO2 thin films are sputtering deposited on BK7 substrates, and sharp insulator-to-metal phase transition is obtained with a resistivity change of four orders of magnitude. Terahertz (THz) pump-probe measurements reveal that by illuminating the films with a low pumping power of 143 μ J/cm2 , VO2 films exhibit an ultrafast optical switching to THz transmission within 8 ps. Furthermore, the THz switching ratio reaches over 80% in a wide frequency range from 0.3 to 2.5 THz. All these outstanding features indicate a strong potential of VO2 films for broadband terahertz wave switching and modulation applications.
收稿日期: 2012-10-22
出版日期: 2013-03-04
:
71.30.+h
(Metal-insulator transitions and other electronic transitions)
07.57.Pt
(Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques)
07.57.Pt
(Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques)
78.47.J-
(Ultrafast spectroscopy (<1 psec))
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2013, Vol. 30 
