1Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China 2Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China 3High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China 4Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Abstract：The relationship between structural and electronic phase transitions in V$_2$O$_3$ thin films is of critical importance for understanding of the mechanism behind metal–insulator transition (MIT) and related technological applications. Despite being extensively studied, there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far. Using V$_2$O$_3$ thin films grown on $r$-plane Al$_2$O$_3$ substrates, which exhibit abrupt MIT and structural phase transition, we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements. Our result provides experimental evidence for clarifying this issue, which could form the basis of theoretical studies as well as technological applications in V$_2$O$_3$.
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2021, Vol. 38 
