1Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049 3College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061 4Collaborative Innovation Center of Quantum Matter, Beijing 100190
Abstract：We report the magnetoresistance (MR), de Haas-van Alphen (dHvA) effect and Hall effect measurements on a single crystal of TiSi, which is predicted to be a nodal line semimetal. With application of a magnetic field, a metal-to-insulator-like transition in $\rho(T)$ and a nonsaturating MR are observed at low temperatures. The dHvA oscillations reveal a small Fermi-surface pocket with a nontrivial Berry phase. The analysis of the nonlinear Hall resistivity shows that TiSi is a multiband system with low carrier densities and high mobilities. All these results unambiguously prove the existence of Dirac fermions in TiSi.
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2018, Vol. 35 
