Rectifying the Current−Voltage Characteristics of a LiNbO3 Film/GaN Heterojunction
HAO Lan-Zhong1,2**, LIU Yun-Jie2, ZHU Jun1**, LEI Hua-Wei1, LIU Ying-Ying1, TANG Zheng-Yu1, ZHANG Ying1, ZHANG Wan-Li1, LI Yan-Rong1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 2Faculty of Science, China University of Petroleum, Qingdao 266555
Rectifying the Current−Voltage Characteristics of a LiNbO3 Film/GaN Heterojunction
HAO Lan-Zhong1,2**, LIU Yun-Jie2, ZHU Jun1**, LEI Hua-Wei1, LIU Ying-Ying1, TANG Zheng-Yu1, ZHANG Ying1, ZHANG Wan-Li1, LI Yan-Rong1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 2Faculty of Science, China University of Petroleum, Qingdao 266555
摘要Epitaxial LiNbO3 (LNO) films are grown on n−type GaN semiconductor substrates, forming LNO/GaN p-n junctions. The current-voltage (I–V) and capacitance−voltage (C–V) characteristics of the junctions are studied. The I–V curve shows a clear rectifying property with a turn−on voltage of 2.4 V. For the forward voltages, the conduction mechanism transits from Schottky thermionic emission for low voltages to space-charge-limited current for large voltages. Reverse C–V characteristics exhibit a linear 1/C2 versus V plot, from which a built-in potential of 0.34 V is deduced. These results are explained using the energy-band structure of the LNO/GaN junction.
Abstract：Epitaxial LiNbO3 (LNO) films are grown on n−type GaN semiconductor substrates, forming LNO/GaN p-n junctions. The current-voltage (I–V) and capacitance−voltage (C–V) characteristics of the junctions are studied. The I–V curve shows a clear rectifying property with a turn−on voltage of 2.4 V. For the forward voltages, the conduction mechanism transits from Schottky thermionic emission for low voltages to space-charge-limited current for large voltages. Reverse C–V characteristics exhibit a linear 1/C2 versus V plot, from which a built-in potential of 0.34 V is deduced. These results are explained using the energy-band structure of the LNO/GaN junction.
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2011, Vol. 28 
