2011, Vol. 28(10): 107703-107703    DOI: 10.1088/0256-307X/28/10/107703
	Rectifying the Current−Voltage Characteristics of a LiNbO3 Film/GaN Heterojunction
	HAO Lan-Zhong1,2**, LIU Yun-Jie2, ZHU Jun1**, LEI Hua-Wei1, LIU Ying-Ying1, TANG Zheng-Yu1, ZHANG Ying1, ZHANG Wan-Li1, LI Yan-Rong1
	1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 2Faculty of Science, China University of Petroleum, Qingdao 266555
	收稿日期 2011-02-19  修回日期 1900-01-01
	Supporting info
	[1] Gelmont B, Kim K and Shur M 1993 J. Appl. Phys. 74 1818 [2] Singh M , Wu Y R and Singh J 2003 Solid-State Electron. 47 2155 [3] Xiao B et al 2007 Appl. Phys. Lett. 91 182908 [4] Yang S Y et al 2007 Appl. Phys. Lett. 91 022909 [5] Posadas A et al 2005 Appl. Phys. Lett. 87 171915 [6] Hao L Z et al 2009 Appl. Phys. Lett. 95 232907 [7] Watanabe Y, Sawamura D and Okano M 1998 Solid State Ionics 108 109 [8] Hunter D et al 2006 Appl. Phys. Lett. 89 092102 [9] Hao L Z et al 2007 Appl. Phys. Lett. 91 212105 [10] Yang H et al 2008 Appl. Phys. Lett. 92 102113 [11] Hu M L, Hu L J and Chang J Y 2003 Jpn. J. Appl. Phys. 42 7414 [12] Yang W C et al 2004 Appl. Phys. Lett. 85 2316 [13] Hansen Peter J et al 2005 J. Vac. Sci. Technol. B 23 162 [14] Akazava H and Shimada M 2008 J. Vac. Sci. Technol. A 26 281 [15] Wu Y L et al 2008 Appl. Phys. Lett. 92 012115 [16] Guo S M et al 2007 Appl. Phys. Lett. 91 143509 [17] Guo S M et al 2006 Appl. Phys. Lett. 89 223506 [18] Fedison J B et al 1998 Appl. Phys. Lett. 72 2841 [19] Neamen Donald A 2003 Semiconductor Physics and Devices: Basic Principles (New York: McGraw-Hill)