A Compact and Highly Efficient Silicon-Based Asymmetric Mach–Zehnder Modulator with Broadband Spectral Operation
ZHOU Liang1, LI Zhi-Yong1**, XIAO Xi1, XU Hai-Hua1, FAN Zhong-Chao2, HAN Wei-Hua2, YU Yu-De1, YU Jin-Zhong1
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
A Compact and Highly Efficient Silicon-Based Asymmetric Mach–Zehnder Modulator with Broadband Spectral Operation
ZHOU Liang1, LI Zhi-Yong1**, XIAO Xi1, XU Hai-Hua1, FAN Zhong-Chao2, HAN Wei-Hua2, YU Yu-De1, YU Jin-Zhong1
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要An asymmetric Mach–Zehnder electro-optic modulator is demonstrated by using a silicon-based p-i-n diode embedded in compact 200 µm long phase shifters. The measured figure of merit VπL=0.23 V⋅mm shows highly efficient modulation by the device, and an open eye−diagram at 3.2 Gbit/s confirmed its fast electro-optic response. Integrated with the grating coupler, the device exhibits a broad operational wavelength range of 70 nm with a uniform 18 dB extinction ratio covering the C−band and part L-band of optical communication.
Abstract:An asymmetric Mach–Zehnder electro-optic modulator is demonstrated by using a silicon-based p-i-n diode embedded in compact 200 µm long phase shifters. The measured figure of merit VπL=0.23 V⋅mm shows highly efficient modulation by the device, and an open eye−diagram at 3.2 Gbit/s confirmed its fast electro-optic response. Integrated with the grating coupler, the device exhibits a broad operational wavelength range of 70 nm with a uniform 18 dB extinction ratio covering the C−band and part L-band of optical communication.
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