摘要We analyze theoretically the 1×2 low-power all-optical switching in silicon nanowaveguide ring resonators (RR) based on the Kerr effect and two-photon absorption (TPA), and give a comparison between both the all-optical switches. The calculation shows that the switching power of the TPA-RR switch is 3 orders smaller than that of the Kerr-RR switch. The switching time for both the switches is about 100ps.
Abstract：We analyze theoretically the 1×2 low-power all-optical switching in silicon nanowaveguide ring resonators (RR) based on the Kerr effect and two-photon absorption (TPA), and give a comparison between both the all-optical switches. The calculation shows that the switching power of the TPA-RR switch is 3 orders smaller than that of the Kerr-RR switch. The switching time for both the switches is about 100ps.
(Laser light absorption in plasmas (collisional, parametric, etc.))
引用本文:
LI Chun-Fei;DOU Na. Optical Switching in Silicon Nanowaveguide Ring Resonators Based on Kerr Effect and TPA Effect[J]. 中国物理快报, 2009, 26(5): 54203-054203.
LI Chun-Fei, DOU Na. Optical Switching in Silicon Nanowaveguide Ring Resonators Based on Kerr Effect and TPA Effect. Chin. Phys. Lett., 2009, 26(5): 54203-054203.
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2009, Vol. 26 
