A New Method to Measure Trap Characteristics of Silicon Solar Cells
MA Xun1,2, LIU Zu-Ming2, QU Sheng3, WANG Shu-Rong2, HAO Rui-Ting2, LIAO Hua2
1College of Water Conservancy and Civil Engineering, China Agricultural University, Beijing 100083 2Solar Energy Research Institute, Yunnan Normal University, Kunming 650092 3Eoplly New Energy Technology Co. Ltd, Beijing 100016
A New Method to Measure Trap Characteristics of Silicon Solar Cells
MA Xun1,2, LIU Zu-Ming2, QU Sheng3, WANG Shu-Rong2, HAO Rui-Ting2, LIAO Hua2
1College of Water Conservancy and Civil Engineering, China Agricultural University, Beijing 100083 2Solar Energy Research Institute, Yunnan Normal University, Kunming 650092 3Eoplly New Energy Technology Co. Ltd, Beijing 100016
摘要A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley–Read–Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500–1050 nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.
Abstract：A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley–Read–Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500–1050 nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.
MA Xun;LIU Zu-Ming;QU Sheng;WANG Shu-Rong;HAO Rui-Ting;LIAO Hua
. A New Method to Measure Trap Characteristics of Silicon Solar Cells[J]. 中国物理快报, 2011, 28(2): 28801-028801.
MA Xun, LIU Zu-Ming, QU Sheng, WANG Shu-Rong, HAO Rui-Ting, LIAO Hua
. A New Method to Measure Trap Characteristics of Silicon Solar Cells. Chin. Phys. Lett., 2011, 28(2): 28801-028801.
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