2011, Vol. 28(2): 28801-028801    DOI: 10.1088/0256-307X/28/2/028801
A New Method to Measure Trap Characteristics of Silicon Solar Cells
MA Xun1,2, LIU Zu-Ming2, QU Sheng3, WANG Shu-Rong2, HAO Rui-Ting2, LIAO Hua2
1College of Water Conservancy and Civil Engineering, China Agricultural University, Beijing 100083
2Solar Energy Research Institute, Yunnan Normal University, Kunming 650092
3Eoplly New Energy Technology Co. Ltd, Beijing 100016
收稿日期 2010-07-20  修回日期 1900-01-01
Supporting info
[1] Chen Z M and Wang J N 2003 Basic Material Physics for Semiconductor Devices (Beijing: Beijing Science Printer) pp 106–107 313–324 (in Chinese)
[2] Capan I and Borjanovic V 2007 Solar Energy Mater. Solar Cells 91 931
[3] Lang D V 1974 J. Appl. Phys. 45 3023
[4] Johnson N M and Bartelink D J 1979 J. Appl. Phys. 50 4828
[5] Hurtes C 1978 Appl. Phys. Lett. 32 821
[6] Liu E K and Zhang B S 2002 Semiconductors Physics (Beijing: National Defense and Industry Press) pp 127 132 (in Chinese)
[7] Macdonald D and Cuevas A 2003 Phys. Rev. B 67 075203
[8] Ye L X 2009 Semiconductor Physics (Beijing: Higer Education Press) pp 245–259 (in Chinese)
[9] Shryshevsky V A and Kilchitskaya S S 2000 16th European Photovoltaic Solar Energy Conference (Glasgow, UK 1–5 May 2000) p 239
[10] Sinton R and Cuevas A 1996 Appl. Phys. Lett. 69 2510
[11] Yang D R 2007 Solar Cell Materials (Beijing: Chemistry and Industry Press) pp 156–160 (in Chinese)
[12] Macdonald D, Sinton R and Cuevas A 2001 J. Appl. Phys. 89 2772