Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001)
HE Jun1, J. C. LEE2, LI Ming1, WANG Ze-Song1, LIU Chuan-Sheng1, FU De-Jun1**
1Accelerator Laboratory, Wuhan University, Wuhan 430072 2Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pildong, Seoul 100-715, Korea
Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001)
HE Jun1, J. C. LEE2, LI Ming1, WANG Ze-Song1, LIU Chuan-Sheng1, FU De-Jun1**
1Accelerator Laboratory, Wuhan University, Wuhan 430072 2Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pildong, Seoul 100-715, Korea
摘要A computer-automated Rutherford backscattering/channeling (RBS/C) system is developed to provide in situ ion beam analysis of the accelerator-TEM system in Wuhan University. The basic system components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the Panmure stepping motor controller and integrated circuit modules, and a Labview programmed operating system with associated electronics. Single crystalline Si(001) and ZnO(001) implanted with Mn ions were characterized with this computerized setup. The crystalline quality χmin and channeling half angle of Si(001) were measured to be 4.65% and 0.52°, respectively, which are comparable to theoretical values 4.2% and 0.32°. The ion implantation induced damage depth profile derived from channeling and random spectrum is in reasonable agreement with the result calculated by the SRIM Monte-Carlo simulation code.
Abstract：A computer-automated Rutherford backscattering/channeling (RBS/C) system is developed to provide in situ ion beam analysis of the accelerator-TEM system in Wuhan University. The basic system components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the Panmure stepping motor controller and integrated circuit modules, and a Labview programmed operating system with associated electronics. Single crystalline Si(001) and ZnO(001) implanted with Mn ions were characterized with this computerized setup. The crystalline quality χmin and channeling half angle of Si(001) were measured to be 4.65% and 0.52°, respectively, which are comparable to theoretical values 4.2% and 0.32°. The ion implantation induced damage depth profile derived from channeling and random spectrum is in reasonable agreement with the result calculated by the SRIM Monte-Carlo simulation code.
(Specific materials: fabrication, treatment, testing, and analysis)
引用本文:
HE Jun;J. C. LEE;LI Ming;WANG Ze-Song;LIU Chuan-Sheng;FU De-Jun**
. Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001)[J]. 中国物理快报, 2011, 28(1): 12901-012901.
HE Jun, J. C. LEE, LI Ming, WANG Ze-Song, LIU Chuan-Sheng, FU De-Jun**
. Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001). Chin. Phys. Lett., 2011, 28(1): 12901-012901.
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