摘要InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p−n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.
Abstract：InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p−n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
DENG Hui-Yong**;WANG Qi-Wei;TAO Jun-Chao;WU Jie;HU Shu-Hong;CHEN Xin;DAI Ning***. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. 中国物理快报, 2010, 27(11): 114206-114206.
DENG Hui-Yong**, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning***. Electrical Property of Infrared-Sensitive InAs Solar Cells. Chin. Phys. Lett., 2010, 27(11): 114206-114206.
[1] Bergmann R B 1999 Appl. Phys. A: Mater. Sci. Process. 69 187
[2] Kurtz S R, Allerman A A, Jones E D, Gee J M, Banas J J and Hammons B E 1999 Appl. Phys. Lett. 74 729
[3] O'Regan B and Gratzel M 1991 Nature 353 737
[4] Green M A and Emery K 1993 Prog. Photovoltaics Res. Appl. 1 225
[5] Green M A 2001 Prog. Photovoltaics Res. Appl. 9 123
[6] Green M A, Emery K, Hishikawa Y and Warta W 2009 Prog. Photovoltaics Res. Appl. 17 320
[7] Bertness K A, Kurtz S R, Friedman D J, Kibbler A E, Kramer C and Olson J M 1994 Appl. Phys. Lett. 65 989
[8] Ameri T, Dennler G, Lungenschmied C and Brabec C J 2009 Energy Environ. Sci. 2 347
[9] Fraas L M, Girard G R, Avery J E, Arau B A, Sundaram V S, Thompson A G and Gee J M 1989 J. Appl. Phys. 66 3866
[10] Tang G H, Xu B, Jiang L W, Kong J X, Kong N, Liang D C, Liang P, Ye X L, Jin P, Liu F Q, Chen Y H and Wang Z G 2010 Chin. Phys. Lett. 27 047801
[11] Krier A and Huang X L 2005 Appl. Phys. Lett. 86 061113
[12] Deng H Y, Hong X K, Fang W Z and Dai N 2007 Mater. Charact. 58 307
[13] Dobbelaere W, Boeck J D, Heremans P, Mertens R, Borghs G, Luyten W and Landuyt J V 1992 Appl. Phys. Lett. 60 868
[14] Fan J C C 1986 Solar Cells 17 309
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