Numerical Simulation of a P+ a -SiC:H/N+
SHAO Qing-Yi1** , CHEN A-Qing2 , ZHU Kai-Gui3 , ZHANG Juan1
1 Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 2 School of New Energy Engineering, Leshan Vocational and Technical College, Leshan 614000 3 Department of Physics, Beihang University, Beijing 100191
Abstract ：The P+ a -SiC:H/N+ + + + a -SiC:H/N+ Voc ) of 1.31 V, high conversion efficiency of 17.363% and high fill factor of 0.884. Therefore, the P+ a -SiC:H/N+
收稿日期: 2012-01-11
出版日期: 2012-07-31
:
73.50.Pz
(Photoconduction and photovoltaic effects)
61.43.Bn
(Structural modeling: serial-addition models, computer simulation)
61.43.Dq
(Amorphous semiconductors, metals, and alloys)
42.79.Ek
(Solar collectors and concentrators)
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2012, Vol. 29 
