摘要Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission (around 740nm) caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy (TEM), x-ray diffraction (XRD) and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850°C towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.
Abstract：Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission (around 740nm) caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy (TEM), x-ray diffraction (XRD) and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850°C towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.
WANG Peng-Wei;SONG Yi-Pu;ZHANG Xin-Zheng;XU Jun;YU Da-Peng. Transformation from β-Ga2O3 to GaN Nanowires via Nitridation[J]. 中国物理快报, 2008, 25(3): 1038-1041.
WANG Peng-Wei, SONG Yi-Pu, ZHANG Xin-Zheng, XU Jun, YU Da-Peng. Transformation from β-Ga2O3 to GaN Nanowires via Nitridation. Chin. Phys. Lett., 2008, 25(3): 1038-1041.
2008, Vol. 25 
