Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements

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摘要 Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangular confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.

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	A. John Peter
	Vemuri Lakshminarayana

Abstract：Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangular confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.

Key words： 73.21.La 73.20.Dx 73.20.Mf 73.20.Hb

收稿日期: 2007-12-17 出版日期: 2008-07-25

:	73.21.La	(Quantum dots)
	73.20.Dx
	73.20.Mf	(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)

引用本文:

A. John Peter;Vemuri Lakshminarayana. Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements[J]. 中国物理快报, 2008, 25(8): 3021-3024.
A. John Peter, Vemuri Lakshminarayana. Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements. Chin. Phys. Lett., 2008, 25(8): 3021-3024.

链接本文:

https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2008/V25/I8/3021

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[10]	. [J]. 中国物理快报, 2014, 31(05): 57302-057302.
[11]	. [J]. 中国物理快报, 2013, 30(11): 118102-118102.
[12]	. [J]. 中国物理快报, 2013, 30(10): 107301-107301.
[13]	. [J]. 中国物理快报, 2013, 30(8): 87102-087102.
[14]	. [J]. 中国物理快报, 2013, 30(7): 77302-077302.
[15]	. [J]. 中国物理快报, 2013, 30(7): 77303-077303.