Effect of CO on Characteristics of AlGaN/GaN Schottky Diode

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摘要 Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor signal (3mA, in N₂; 2mA in air ambient) biased 2V after 1% CO is introduced at 50°C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N₂, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection.

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	作者相关文章
	FENG Chun
	WANG Xiao-Liang
	YANG Cui-Bai
	XIAO Hong-Ling
	ZHANG Ming-Lan
	JIANG Li-Juan
	TANG Jian
	HU Guo-Xin
	WANG Jun-Xi
	WANG Zhan-Guo

Abstract：Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor signal (3mA, in N₂; 2mA in air ambient) biased 2V after 1% CO is introduced at 50°C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N₂, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection.

Key words： 73.61.Ey 07.07.Df 73.40.Ns

收稿日期: 2008-01-25 出版日期: 2008-07-25

:	73.61.Ey	(III-V semiconductors)
	07.07.Df	(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
	73.40.Ns	(Metal-nonmetal contacts)

引用本文:

FENG Chun;WANG Xiao-Liang;YANG Cui-Bai;XIAO Hong-Ling;ZHANG Ming-Lan;JIANG Li-Juan;TANG Jian;HU Guo-Xin;WANG Jun-Xi;WANG Zhan-Guo. Effect of CO on Characteristics of AlGaN/GaN Schottky Diode[J]. 中国物理快报, 2008, 25(8): 3025-3027.
FENG Chun, WANG Xiao-Liang, YANG Cui-Bai, XIAO Hong-Ling, ZHANG Ming-Lan, JIANG Li-Juan, TANG Jian, HU Guo-Xin, WANG Jun-Xi, WANG Zhan-Guo. Effect of CO on Characteristics of AlGaN/GaN Schottky Diode. Chin. Phys. Lett., 2008, 25(8): 3025-3027.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2008/V25/I8/3025

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