摘要A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80mA, the extinction ratio exceeds 25dB at 1.55μm. The polarization sensitivity of the crosstalk is within ± 0.5dB. The switching speed is below 10ns. The flat response spectrum throughout the 1542-1562nm wavelength range indicates that this device is insensitive to wavelength.
Abstract：A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80mA, the extinction ratio exceeds 25dB at 1.55μm. The polarization sensitivity of the crosstalk is within ± 0.5dB. The switching speed is below 10ns. The flat response spectrum throughout the 1542-1562nm wavelength range indicates that this device is insensitive to wavelength.
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2009, Vol. 26 
