CNx Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment
REN Zhongmin, XIONG Xiaxing, DU Yuancheng, WU Jiada, YING Zhifeng, QIU Yuanxun, LI Fuming
State Key Joint Laboratory for Material Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433
CNx Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment
REN Zhongmin;XIONG Xiaxing;DU Yuancheng;WU Jiada;YING Zhifeng;QIU Yuanxun;LI Fuming
State Key Joint Laboratory for Material Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433
关键词 ：
81.15.Jj ,
34.50.Rk ,
62.20.-x
Abstract ： Deposition of CNx thin films on Si(111) has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Films with a maximum N-concentration of 34% are obtained. The N species is found to be relatively constant along the depth of films. X-ray spectroscopy data confirm the existence of covalent C - N bonds. Nanocrystallites structure has been detected in the amorphous matrix of the films. Qualitative hardness tests indicate that the films are relatively hard and adhesive.
Key words ：
81.15.Jj
34.50.Rk
62.20.-x
出版日期: 1994-07-01
:
81.15.Jj
(Ion and electron beam-assisted deposition; ion plating)
34.50.Rk
(Laser-modified scattering and reactions)
62.20.-x
(Mechanical properties of solids)
引用本文:
REN Zhongmin;XIONG Xiaxing;DU Yuancheng;WU Jiada;YING Zhifeng;QIU Yuanxun;LI Fuming. CNx Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment
[J]. 中国物理快报, 1994, 11(7): 461-464.
x Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment
. Chin. Phys. Lett., 1994, 11(7): 461-464.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I7/461
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