Sil-x Gex /Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy
GAO Yong, LIU Enke, LI Guozheng, LIU Xiding, ZHANG Xiangjiu* , LU Xuekun* , WANG Xun*
Electronic Engineering Department, Xi’an Jiaotong University, Xi’an 710049
* Surface Physics National Key Laboratory, Fudan University, Shanghai 200433
Sil-x Gex /Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy
GAO Yong;LIU Enke;LI Guozheng;LIU Xiding;ZHANG Xiangjiu* ;LU Xuekun* ;WANG Xun*
Electronic Engineering Department, Xi’an Jiaotong University, Xi’an 710049
* Surface Physics National Key Laboratory, Fudan University, Shanghai 200433
关键词 ：
42.79.-e ,
42.82.+n
Abstract ： Sil-x Gex /Si single-mode rib waveguides with 0.5dB/cm losses have been fabricated, in which the SiGe layers are grown by molecular beam epitaxy. The single-mode waveguide dimensions determined experimentally are consistent with the single-mode theory of SiGe waveguides.
Key words ：
42.79.-e
42.82.+n
出版日期: 1994-12-01
引用本文:
GAO Yong;LIU Enke;LI Guozheng;LIU Xiding;ZHANG Xiangjiu*;LU Xuekun*;WANG Xun*. Sil-x Gex /Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy[J]. 中国物理快报, 1994, 11(12): 734-736.
l-x Gex /Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy. Chin. Phys. Lett., 1994, 11(12): 734-736.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I12/734
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1994, Vol. 11 
