TRANSIENT PHOTOLUMINESCENCE SPECTRA OF GaAsIAlGaAs
QUANTUM WELLS, QUANTUM WELL WIRES, AND QUANTUM WELL BOXES
CHENG Wenqin, HUANG Yi, ZHOU Junming, FENG Wei, WANG Hezhou1, SHE Weilong1, HUANG Xuguang1, LIN Weizhu1, YU Zhenxin1, XU Geng2
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
1Laboratory of Ultrafast Laser Spectrascopy, Zhongshan University, Guangzhou 510275
2Department of Physics, Zhongshan University, Guangzhou 510275
TRANSIENT PHOTOLUMINESCENCE SPECTRA OF GaAsIAlGaAs
QUANTUM WELLS, QUANTUM WELL WIRES, AND QUANTUM WELL BOXES
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
1Laboratory of Ultrafast Laser Spectrascopy, Zhongshan University, Guangzhou 510275
2Department of Physics, Zhongshan University, Guangzhou 510275
Abstract： The interaction of the electrons with the phonons in GaAs/AlGaAs quantum wells, quantum well wires, and quantum well boxes has been studied by meansuring their time resolved photoluminescence (PL) spectra. In the quantum well (Q W) system, relaxation time of the electron energy of the narrower well is shorter than that of the wider well. It is attributed to the stronger interaction of the electrons with the interface mode phonons. In the Q W wires and Q W boxes, the shortening of the relaxation time is obvious. It is due to the stronger electron-phonon interaction caused by the reduction of screening effect. Our experiments also demonstrated the incident laser intensity dependence of the relaxation time.
1990, Vol. 7 
